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6MBP50TEA060
Econo IPM series
Features
* Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit
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600V / 50A 6 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25C unless otherwise specified)
Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC VCC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 450 500 400 600 50 100 50 144 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA C C C C V N*m
DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5)
Collector-Emitter voltage *1 Collector current
Inverter
Note *1 : Vces shall be applied to the input voltage between terminal P and U or u or W, N and U or V or W *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/1.263/(50 x 2.6) x 100=76.1% *3 : Pc=125C/IGBT Rth(j-c)=125/0.87=144W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 101sec.
6MBP50TEA060
Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit
Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr PAV Condition Min. Typ. 2.0 1.6 -
IGBT-IPM
Max. 1.0 2.5 2.6 3.6 0.3 -
Unit mA V V s
Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition)
VCE=600V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VDC=300V,Tj=125C 1.2 IC=50A Fig.1, Fig.6 VDC=300V, IC=50A Fig.1, Fig.6 Internal wiring inductance=50nH 30 Main circuit wiring inductace=54nH
Inverter
mJ
Control circuit
Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575
Current limit resistor
RALM
Protection Section ( Vcc=15V)
Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH VUV VH Condition Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips Min. 75 150 11.0 0.2 Typ. 5 20 0.5 Max. 8 -12.5 Unit A s s C C V V
Thermal characteristics( Tc=25C)
Item Junction to Case thermal resistance *10 Case to fin thermal resistance with compound *10 : (For 1 device, Case is under the device) Inverter IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.87 1.263 Unit C/W C/W - C/W
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV
Recommendable value
Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 400 16.5 3.0 Unit V V Nm
Weight
Item Weight Symbol Wt Min. Typ. 270 Max. Unit g
6MBP50TEA060
Vin
Vin(th) On Vin(th) 90% 50%
IGBT-IPM
trr
Ic
90% 10% ton toff
Figure 1. Switching Time Waveform Definitions
/Vin Vge (Inside IPM ) Fault (Inside IPM )
off on Gate On Gate Off on off
normal alarm tALM > Max. 1 tALM >
Max.
/ALM
2
t ALM 2ms(typ.) 3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic IALM
Ic IALM
Ic IALM
Figure.4 Definition of tsc
Vcc
20 k
DC 15V
P P IPM IPM
L
+ +
DC 300V
Vin
HCPL 4504
VccU DC 15V
SW1 20k
P IPM U
CT
GND
N
Ic
VinU GNDU
AC200V
Figure 6. Switching Characteristics Test Circuit
V DC 15V
SW2
+
Vcc 20k VinX GND
W
4700p
Icc A
Noise
Vcc P IPM Vin U V W GND N
N
DC 15V
Earth
Cooling Fin
P.G +8V fsw
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
6MBP50TEA060
Block diagram
P VccU VinU AL MU GNDU Vcc V VinV AL MV GNDV VccW VinW AL MW GNDW Vcc VinX
4 3 2
IGBT-IPM
Pre- Driver
R ALM 1.5k
1
Vz U
8 7 6
Pre- Driver
R ALM 1.5k
5
Vz V
12
11 10
Pre- Driver
R ALM 1.5k
9
Vz W
14 16
Pre- Driver
Vz GND
13
VinY
17
Pre- Driver
Vz
Pre-drivers include following functions 1.Amplifier for driver
Pre- Driver
VinZ
18
2.Short circuit protection 3.Under voltage lockout circuit
B
Vz
4.Over current protection 5.IGBT chip over heating protection
VinDB AL M
15 19
R ALM 1.5k N
Outline drawings, mm
M BCFM
Mass : 270g
6MBP50TEA060
Characteristics
Control circuit characteristics (Respresentative)
IGBT-IPM
P ower sup ply current vs. Switching frequency Tc=1 25C
60 Pow er su p ply c urre nt : Icc (m A) 50 40
V cc=17V
Input signal threshold voltage vs. P ower sup ply voltag e
2 .5 Inp u t sig na l thres hold voltag e : Vin (on),Vin (o ff) (V)
Tj=25C Tj= 12 5C
P-sid e N-sid e
2
} Vin(off)
1 .5
} Vin(on)
30 20 10 0 0 5 10 15
V cc=15V V cc=13V
1
V cc= 17V V cc= 15V V cc= 13V
0 .5
0 20 25 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V)
Switch ing frequency : fs w (k Hz)
Under voltage vs. Junction temp erature
14 12 Und er voltag e : VUVT (V) 10 8 6 4 2 0 20 40 60 80 100 12 0 140 Ju nc tion te m pe ra tu re : Tj (C) Under vol tage h ys teris is : VH (V)
Un d er voltag e h ysterisis vs. Jn ction tem p erature 1
0 .8
0 .6
0 .4
0 .2
0 20 40 60 80 100 12 0 140 Ju nc tion te m pe ra tu re : Tj (C)
Alarm hold tim e vs. P ower sup ply voltag e
3 O ver he atin g p rote ction : TjO H (C) OH hy ste risis : Tj H (C) Ala rm h ol d tim e : tALM (m Se c) 2 .5 Tc= 10 0 C 2 Tc =25C 1 .5 1 0 .5 0 12 13 14 15 16 17 18 Power s up p ly voltage : Vcc (V) 20 0
Over heatin g characteristics TjOH,TjH vs. Vcc
TjO H 15 0
10 0
50 TjH 0 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V)
6MBP50TEA060
Main circuit characteristics (Respresentative)
IGBT-IPM
Collector curren t vs. Collector-Em itter voltag e Tj=25 C(Chip)
60
V cc=15V
Collector current vs. Collector-Em itter voltage Tj=25C(Term inal)
60
V cc= 15V
Coll ec to r Cu rre nt : Ic (A)
Coll ec to r Cu rre nt : Ic (A)
50
Vc c= 17V V cc=13V
50
V cc=17V
V cc=13V
40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
Collector curren t vs. Collector-Em itter voltag e Tj=125C(Chip)
60 50 40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
V cc=15V
Collector curren t vs. Collector-Em itter voltag e Tj=125C(Term inal)
60 50
V cc=17V V cc=15V
Collector Cu rre nt : Ic (A)
V cc=17V V cc=13V
Collector Cu rre nt : Ic (A)
40
V cc= 13V
30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V)
Forward current vs. Forward voltage (Chip)
10 0 10 0
Forward current vs. Forward voltage (Term inal)
Fo rw ard Cu rren t : If (A)
Fo rw ard Current : If (A)
80 12 5 C 60 2 5C
80 12 5 C 2 5C 60
40
40
20
20
0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V)
0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V)
6MBP50TEA060
IGBT-IPM
6 5 4 3 Eon 2 1 0 0 10 20 30 40 50 60
Switch in g l os s : Eon,Eo ff,Err (m J/cy cle)
Switching Loss vs.Collector Current Edc=30 0V,Vcc=15 V,Tj=25C
Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e)
Switching Loss vs.Collector Current Edc=300V,V cc=15V,Tj=1 25C
6 Eon 5 4 3 2 Eoff 1 E rr 0 0 10 20 30 40 50 60
Eoff E rr
Collec tor cu rren t : Ic (A)
Collec tor cu rren t : Ic (A)
Transient therm al resistance
Th erm al res is ta nc e : R th (j-c) (C /W )
FW D
1
IG B T
0 .1
0.01 0.00 1 0.0 1 0 .1 1
Pu lse width :Pw (sec)
Power derating for IG BT (per device)
15 0 Co lle cter Power D issip ation : P c (W ) Co llecter P owe r D is sipatio n : P c (W ) 15 0
Power derating for FW D (per device)
10 0
10 0
50
50
0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (C)
0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (C)
6MBP50TEA060
IGBT-IPM
10 000 Switch in g tim e : ton ,to ff,tf (n Se c)
Switching tim e vs. Collector current E dc=300V,Vcc=15V,Tj=25C
10 00 0 Switc h ing tim e : ton ,to ff,tf (n Se c)
Switching tim e vs. Collector current Ed c=3 00V,Vcc=1 5V,Tj=12 5C
to n 1 000 to ff
to n to ff 1 00 0
100 tf
10 0 tf
10 20 30 40 50 60 70 80 Col lector cu rren t : Ic (A)
10 20 30 40 50 60 70 80 Col lector cu rren t : Ic (A)
Reverse recovery characteristics trr,Irr vs.IF
trr125C R eve rse rec overy cu rre n t:Irr(A) Reverse recovery time:trr(n se c)
trr2 5 C 10 0
Irr12 5C 10
Irr2 5 C
1 20 30 40 50 60 70 80 Fo rw ard cu rren t:IF(A)

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